Crystal structures as well as electronic properties of silicon-wealthy silicon carbide materials by to start with theory calculations A major problem for SiC commercialization has become the elimination of defects: edge dislocations, screw dislocations (both equally hollow and closed core), triangular defects and basal aircraft dislocations. Debye derived his equation https://www.facebook.com/permalink.php?story_fbid=pfbid071ZD76TNLYkPybEVNBWHVy3Ka1UJ8AjzzXjpssAusvfqdMEPBEF86Uv2XhdjMPRJl&id=61562415773754&__cft__[0]=AZUWBtn_Dehxt3fTOXyTXs2NGXckR0geuLTrSa8o7_2wfLVx93WzxYqlHyvwG6KCBIdchsELML05LH7oyJyMaVoo0ElmjZet94afZmnkUS68yo0N5erDEshVM1YhGc6W8HOKt0kZaCOd1FKUDA2qtjY1o2O2paiab0HRiv3IW2dR7KUizwd2vqAIFcE_7FqzBumLObpxmHMxj5MkOl9ghy52&__tn__=%2CO%2CP-R